current :500 ma vol t age:100 v olts cdsv5-4448c2 cdsv6-4448a2 / s2 features fast switching speed ultra-small surface mount package for general purpose switching applications high conductance features case: sot-353 and sot-363, molded plastic case material - ul flammability rating classification 94v-0 terminals: solderable per mil-std-202,method 208 weight: 0.006 grams (approx.) surface mount fast switching diode array surface mount fast switching diode array mds0308001a page 1 cdsv5-4448c2 cdsv6-4448a2 c 2 c 1 nc a c 3 c 4 a 2 a 1 c a 3 a 4 ac 1 ac 2 c 2 a 1 a 2 c 1 cdsv6-4448s2 characteristic symbol value unit non-repetitive peak reverse voltage v rm 100 v peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 80 v rms reverse voltage v r(rms) 57 v forward continuous current i fm 500 ma average rectified output current i o 250 ma non-repetitive peak forward surge current @ t = 1.0 s @ t = 1.0s i fsm 4.0 2.0 a power dissipation p d 200 mw thermal resistance junction to ambient air r ja 625 c/w operating and storage temperature range t j ,t stg -65 to +150 c maximum ratings @ t a = 25c unless otherwise specified electrical characteristics @ t a = 25c unless otherwise specified characteristic symbol min max unit test condition reverse breakdown voltage (note 2) v br(r) 80 v i r = 100a maximum forward voltage (note 2) v fm 0.62 0.72 0.855 1.0 1.25 v i f = 5.0ma i f = 10ma i f = 100ma i f = 150ma maximum peak reverse current (note 2) i rm 100 50 30 25 na a a na v r = 70v v r = 75v, t j = 150c v r = 25v, t j = 150c v r = 20v junction capacitance c j 3.5 pf v r = 6, f = 1.0mhz reverse recovery time t rr 4.0 ns v r = 6v, i f = 5ma notes: 2. short duration pulse test used to minimize self-heating effect. this pin omitted for sot-353 orientation indicato r applies only to parts where shown below sot-363/sot-353 0.10 / 0.30 1.15/1.35 2.00/ 2.20 0.65 nominal 1.80/2.20 max0.10 0.90//1.0 0.10/0.25 all dimensions in mm . 30/ .40 . 25/ .40
mds0308001a page 2 surface mount fast switching diode array 04 6 8 2 10 i , forward current (ma) fig. 1. reverse recovery time vs. forward current f t , reverse recover y time (ns) rr 0 0.5 1.0 1.5 2.0 2 .5 0.10 1.0 10.0 0.01 0.001 0 20 40 60 80 i , reverse current ( a) r v , reverse voltage (v) fig. 2 reverse current vs reverse voltage r ta = 100 c ta=0 c ta=75 c ta=50 c ta=25 c ta=-30 c 10 100 1 0.1 0 1000 800 200 400 600 i,f o rward current (ma) f v , forward voltage (mv) fig. 4 forward current vs. forward voltage f ta=-30 c ta=50 c ta=0 c ta=85 c ta=25 c 04 3 2 5 1 6 v , reverse voltage (v) fig. 3. typical junction capacitance vs. reverse volta g e r c , junction capacitance (pf) j 0 1 2 3 4 rati n g a n d c h aracteristic curves
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